Microwave rotatable sputtering deposition
US8057649B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2008 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Aug 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3426
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is an invention that uses a coaxial microwave antenna as a primary plasma source in PVD. The coaxial microwave antenna is positioned inside a sputtering target. Instead of using a cathode assist in sputtering, microwaves generated from the coaxial microwave antenna may leak through the sputtering target that comprises a dielectric material to form microwave plasma outside the sputtering target. To further enhance plasma density, a magnetron or a plurality of magnetrons may be added inside the target to help confine secondary electrons. An electric potential may be formed between adjacent magnetrons and may further enhance ionization. To achieve directional control of the generated microwaves, a shield that comprises a dielectric material or dielectric material coated metal may be added proximate the coaxial microwave antenna. Furthermore, for high utilization of expensive target materials, a target can rotate to improve the utilization efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.