Atomic layer removal process with higher etch amount

US8058179B1 · kind B1 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Nerissa Draeger · Milpitas, US
• Harald te Nijenhuis · Fremont, US
• Henner Meinhold · Sandhausen, DE
• Bart J. van Schravendijk · Sunnyvale, US
• Lakshmi Nittala · Sunnyvale, US

Key dates

• Filing date: Dec 23, 2008
• Grant date: Nov 15, 2011
• Expiry date: Jan 13, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76837
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per cycle. By pumping down the process station between reacting operations, the reaction is partially “reset.” A higher overall etch rate is achieved by a multiple exposure with pump down ALR process.