Metals compatible post-etch photoresist remover and/or sacrificial antireflective coating etchant
US8058219B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2006 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Dec 26, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.