Patent · US Active

Metals compatible post-etch photoresist remover and/or sacrificial antireflective coating etchant

US8058219B2 · kind B2 · utility

22Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 12, 2006
Grant dateNov 15, 2011
Priority date
Expiry dateDec 26, 2027

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC11D2111/22
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.