Plasma processing method, plasma processing apparatus and storage medium
US8058585B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2007 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Jul 25, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B3/0012
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
A plasma processing method includes the steps of: loading a substrate on a lower electrode, the substrate having a resist mask formed on a transcription film; supplying a processing gas into a processing chamber; forming a magnetic field, which is oriented toward one direction and perpendicular to a line connecting an upper and the lower electrode; supplying a high frequency power to the lower electrode in the processing chamber to thereby form an electric field; converting the processing gas into a plasma by a magnetron discharge caused by a presence of an orthogonal electromagnetic field; and forming lenses on the transcription film by using the plasma. The high frequency power is supplied to the lower electrode while controlling the magnitude of the electric power divided by a surface area of the substrate to be in a range from about 1200 W/31415.9 mm2 to 2000 W/31415.9 mm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.