Electrochemical memory with internal boundary
US8058643B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2007 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Jun 29, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/11
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Non-volatile resistance change memories, systems, arrangements and associated methods are implemented in a variety of embodiments. According to one embodiment, a memory cell having two sections with outwardly-facing portions, the outwardly-facing portions electrically coupled to electrodes is implemented. The memory cell has an ionic barrier between the two sections. The two sections and the ionic barrier facilitate movement of ions from one of the two sections to the other of the two sections in response to a first voltage differential across the outwardly-facing portions. The two sections and the ionic barrier diminish movement of ions from the one of the two sections to the other of the two sections in response to another voltage differential across the outwardly-facing portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.