Rene Meyer
29Patents
6h-index
17Co-inventors
62Inventor score
Filing activity: Jun 6, 2003 → Mar 7, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8045364B2 | Non-volatile memory device ion barrier | Physics | 113 | Active |
| US8848425B2 | Conductive metal oxide structures in non volatile re-writable memory devices | Physics | 53 | Active |
| US8003511B2 | Memory cell formation using ion implant isolated conductive metal oxide | Electricity | 22 | Active |
| US7614969B2 | Sticks for athletic equipment | Human Necessities | 19 | Active |
| US7724562B2 | Electrochemical memory with heater | Emerging Cross-Sectional Technologies | 16 | Active |
| US8031509B2 | Conductive metal oxide structures in non-volatile re-writable memory devices | Physics | 9 | Active |
| US8058643B2 | Electrochemical memory with internal boundary | Physics | 6 | Active |
| US8264864B2 | Memory device with band gap control | Electricity | 5 | Active |
| US10186553B2 | Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells | Electricity | 5 | Active |
| US8031510B2 | Ion barrier cap | Physics | 5 | Active |
| US9818799B2 | Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells | Electricity | 4 | Active |
| US8320161B2 | Conductive metal oxide structures in non volatile re writable memory devices | Physics | 2 | Active |
| US8274817B2 | Non volatile memory device ion barrier | Physics | 2 | Active |
| US8565006B2 | Conductive metal oxide structures in non volatile re writable memory devices | Physics | 1 | Active |
| US9484533B2 | Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells | Electricity | 1 | Active |
| US7074566B2 | Method for testing hormonal effects of substances | Physics | 1 | Expired |
| US9767897B2 | Conductive metal oxide structures in non-volatile re-writable memory devices | Physics | 1 | Active |
| US9293702B2 | Conductive metal oxide structures in non-volatile re-writable memory devices | Physics | 1 | Active |
| US8358529B2 | Conductive metal oxide structures in non-volatile re-writable memory devices | Physics | 1 | Active |
| US8268667B2 | Memory device using ion implant isolated conductive metal oxide | Electricity | 1 | Active |
| US10311950B2 | Conductive metal oxide structures in non-volatile re-writable memory devices | Physics | 0 | Active |
| US8323129B1 | Process for making composite athletic shaft | Human Necessities | 0 | Active |
| US11037987B2 | Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells | Electricity | 0 | Active |
| US10803935B2 | Conductive metal oxide structures in non-volatile re-writable memory devices | Physics | 0 | Active |
| US11289542B2 | Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.