Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET
US8058687B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2007 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Dec 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
This invention discloses a trenched metal oxide semiconductor field effect transistor (MOSFET) cell. The trenched MOSFET cell includes a trenched gate opened from a top surface of the semiconductor substrate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The trenched gate further includes at least two mutually insulated trench-filling segments each filled with materials of different work functions. In an exemplary embodiment, the trenched gate includes a polysilicon segment at a bottom portion of the trenched gate and a metal segment at a top portion of the trenched gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.