Patent · US Active

Interconnects having sealing structures to enable selective metal capping layers

US8058710B2 · kind B2 · utility

4Cited by

3References

9Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Jun He · Lo Wu, CN
Kevin J. Fischer · Hillsboro, US
Ying Zhou · Tigard, US
Peter K. Moon · Portland, US

Key dates

Filing date	Mar 28, 2008
Grant date	Nov 15, 2011
Priority date	—
Expiry date	Dec 3, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.