Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target
US8062484B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2005 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Sep 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76844
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor, includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target, introducing a carrier gas into the vacuum chamber, and establishing a deposition rate on the wafer by applying D.C. power to the copper target while establishing a plasma ionization fraction by applying VHF power to the copper target. The method can further include promoting re-sputtering of copper on vertical surfaces on the wafer by coupling HF or LF power to the wafer. The method preferably includes maintaining a target magnetic field at the target and scanning the target magnetic field across the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.