Series connected flip chip LEDs with growth substrate removed
US8062916B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 6, 2008 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Aug 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2654
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.