Patent · US Active

Method to increase effective MOSFET width

US8062951B2 · kind B2 · utility

10Cited by

4References

8Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Xiangdong Chen · Irvine, US
Kenneth J. Stein · Sandy Hook, US
Thomas A. Wallner · Pleasant Valley, US

Key dates

Filing date	Dec 10, 2007
Grant date	Nov 22, 2011
Priority date	—
Expiry date	Jul 26, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/0278
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An epitaxial layer of silicon (Si) or silicon-germanium (SiGe) extends over the edge of silicon trench isolation (STI), thereby increasing the effective width of an active silicon region (RX) bordered by the STI. The RX region may have a <100> crystal orientation. An effective width of an FET device formed in the RX region may be increased, therefore performance may be improved with same density. Isolation may not be degraded since RX-to-RX distance is same at bottom. Junction capacitance may be reduced since part of the RX is on STI.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.