Magnetoresistive magnetic field sensor structure

US8063633B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Wolfgang Raberg · Sauerlach, DE
• Juergen Zimmer · Neubiberg, DE

Key dates

• Filing date: Jul 10, 2008
• Grant date: Nov 22, 2011
• Expiry date: Feb 17, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/4902
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A magnetic field sensor structure including a first magnetoresistive element in a spin-valve arrangement with a first reference layer structure with a first reference magnetization direction and a second magnetoresistive element in a spin-valve arrangement with a second reference layer structure with a second reference magnetization direction, wherein the first and second magnetoresistive elements are arranged in a layer vertically above each other and galvanically isolated from each other by an intermediate layer, and wherein the first and second reference magnetization directions are different.