Multi-pass programming in a memory device
US8064252B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 21, 2008 |
| Grant date | Nov 22, 2011 |
| Priority date | — |
| Expiry date | Sep 16, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a memory device, a memory device, and a memory system are provided. According to at least one such method, a first programming pass generates a plurality of first programming pulses to increase the threshold voltages of target memory cells to either a pre-program level or to the highest programmed threshold. A second programming pass applies a plurality of second programming pulses to the target memory cells to increase their threshold voltages only if they were programmed to the pre-program level. The target memory cells programmed to their respective target threshold levels during the first pass are not programmed further.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.