Defect-free junction formation using laser melt annealing of octadecaborane self-amorphizing implants
US8067302B2 · kind B2 · utility
96Cited by
10References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 21, 2009 |
| Grant date | Nov 29, 2011 |
| Priority date | — |
| Expiry date | Jan 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then melted, resolidified, and annealed to completely dissociate and activate the boron clusters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.