Jiping Li
43Patents
11h-index
32Co-inventors
75Inventor score
Filing activity: Jun 10, 1998 → Aug 26, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7026175B2 | High throughput measurement of via defects in interconnects | Electricity | 129 | Expired |
| US8067302B2 | Defect-free junction formation using laser melt annealing of octadecaborane self-amorphizing implants | Electricity | 96 | Active |
| US6049220A | Apparatus and method for evaluating a wafer of semiconductor material | Electricity | 75 | Expired |
| US6054868A | Apparatus and method for measuring a property of a layer in a multilayered structure | Physics | 53 | Expired |
| US6489801B1 | Apparatus and method for evaluating a semiconductor wafer | Electricity | 35 | Expired |
| US8148663B2 | Apparatus and method of improving beam shaping and beam homogenization | Performing Operations; Transporting | 32 | Active |
| US6940592B2 | Calibration as well as measurement on the same workpiece during fabrication | Physics | 24 | Expired |
| US6812047B1 | Evaluating a geometric or material property of a multilayered structure | Electricity | 21 | Expired |
| US8829392B2 | Apparatus and method of improving beam shaping and beam homogenization | Performing Operations; Transporting | 15 | Active |
| US6906801B2 | Measuring a property of a layer in multilayered structure | Electricity | 14 | Expired |
| US8254767B2 | Method and apparatus for extended temperature pyrometry | Electricity | 13 | Active |
| US8652951B2 | Selective epitaxial germanium growth on silicon-trench fill and in situ doping | Electricity | 11 | Active |
| US6911349B2 | Evaluating sidewall coverage in a semiconductor wafer | Physics | 10 | Expired |
| US7465591B2 | Evaluating a geometric or material property of a multilayered structure | Electricity | 9 | Expired |
| US7379185B2 | Evaluation of openings in a dielectric layer | Electricity | 7 | Expired |
| US8674257B2 | Automatic focus and emissivity measurements for a substrate system | Physics | 4 | Active |
| US8582963B2 | Detection of substrate warping during rapid thermal processing | Mechanical Engineering; Lighting; Heating | 4 | Active |
| US9659809B2 | Support cylinder for thermal processing chamber | Electricity | 3 | Active |
| US9908200B2 | Apparatus and method of improving beam shaping and beam homogenization | Performing Operations; Transporting | 3 | Active |
| US8970963B2 | Multiple beam combiner for laser processing apparatus | Physics | 2 | Active |
| US8588831B2 | Method and base station for sending information | Emerging Cross-Sectional Technologies | 2 | Active |
| US7804042B2 | Pryometer for laser annealing system compatible with amorphous carbon optical absorber layer | Performing Operations; Transporting | 2 | Active |
| US10128144B2 | Support cylinder for thermal processing chamber | Electricity | 2 | Active |
| US10421151B2 | Laser noise elimination in transmission thermometry | Physics | 1 | Active |
| US9385004B2 | Support cylinder for thermal processing chamber | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.