Lithography masks and methods of manufacture thereof

US8071261B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Alois Gutmann · Poughkeepsie, US
• Sajan Marokkey · Wappingers Falls, US
• Henning Haffner · Pawling, US
• Chandrasekhar Sarma · Poughkeepsie, US
• Haoren Zhuang · Tokyo, JP
• Matthias Lipinski · Poughkeepsie, US

Key dates

• Filing date: Jul 20, 2007
• Grant date: Dec 6, 2011
• Expiry date: Jul 9, 2028

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F1/26
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Lithography masks and methods of manufacture thereof are disclosed. For example, a method of manufacturing a lithography mask includes forming a stack over a substrate. The stack includes bottom attenuated phase shift material layers, intermediate opaque material layers, and finally top resist layers. The method further includes patterning the stack and then trimming the resist layers to uncover a portion of the opaque material layers. The uncovered opaque material layers are subsequently etched followed by removal of any remaining resist layers.