Thin film semi-conductor-on-glass solar cell devices
US8071872B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 12, 2008 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | Feb 27, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention relates to semiconductor devices suitable for electronic, optoelectronic and energy conversion applications. In a particular form, the present invention relates to the fabrication of a thin film solar cells and thin film transistors through the advantageous combination of semiconductors, insulators, rare-earth based compounds and amorphous and/or ceramic and/or glass substrates. Crystalline or polycrystalline thin film semiconductor-on-glass formation using alkali ion impurity barrier layer(s) are disclosed. Example embodiment of crystalline or polycrystalline thin film semiconductor-on-glass formation using rare-earth based material as impurity barrier layer(s) is disclosed. In particular, thin film silicon-on-glass substrate is disclosed as the alternate embodiment, with impurity barrier designed to inhibit transport of deleterious alkali species from the glass into the semiconductor thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.