Through-electrode, circuit board having a through-electrode, semiconductor package having a through-electrode, and stacked semiconductor package having the semiconductor chip or package having a through-electrode
US8072046B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2008 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | Feb 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10242
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A stacked semiconductor package includes a first semiconductor package having a first semiconductor chip having a first pad and a through-hole passing through a the portion corresponding to the pad; a second semiconductor package disposed over the first semiconductor package, and including a second semiconductor chip having a second pad disposed at a portion corresponding to the first pad and blocking the through-hole; and a through-electrode disposed within the through-hole, and having a pillar shaped core supported by the second pad, a through-electrode unit disposed over a surface of the core and electrically connected with the second pad, a first metal layer interposed between the core and the through electrode unit, and a second metal layer interposed between an inner surface of the first semiconductor chip formed by the through-hole and the through-electrode unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.