Patent · US Active

Lithography systems and processes

US8072577B2 · kind B2 · utility

0Cited by
14References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 5, 2006
Grant dateDec 6, 2011
Priority date
Expiry dateApr 7, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/2014
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An exemplary lithography process may include: receiving a substrate having a photo-sensitive layer; providing a light source capable of causing an exposure of a portion of the photo-sensitive layer; and providing a mask capable of defining at least one pattern that is to be transferred to the photo-sensitive layer. Specifically, the substrate has a top surface on or over the photo-sensitive layer, and the mask receives an electromagnetic wave from the light source at a first surface of the mask and generates a plurality of electromagnetic components from a second surface of the mask. The lithography process may also include: providing a lens, which provides a flat surface at a bottom surface of the lens, for transferring the pattern to the photo-sensitive layer; and adjusting the distance between the flat surface of the lens and the top surface of the substrate to control the number and amount of the electro-magnetic components projected onto the photo-sensitive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.