Method of making nonvolatile memory device containing carbon or nitrogen doped diode
US8072791B2 · kind B2 · utility
4Cited by
48References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2007 |
| Grant date | Dec 6, 2011 |
| Priority date | — |
| Expiry date | Jun 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/20
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of making a nonvolatile memory device includes forming a first electrode, forming at least one nonvolatile memory cell comprising a silicon, germanium or silicon-germanium diode, doping the diode with at least one of nitrogen or carbon, and forming a second electrode over the at least one nonvolatile memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.