Method for fabricating metal-oxide semiconductor transistors
US8076210B2 · kind B2 · utility
1Cited by
8References
5Claims
0Family size
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Key dates
| Filing date | Mar 8, 2011 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Mar 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a metal-oxide semiconductor transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; and performing a first ion implantation process to implant a first molecular cluster having carbon, boron, and hydrogen into the semiconductor substrate at two sides of the gate structure for forming a doped region, wherein the molecular weight of the first molecular cluster is greater than 100.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.