Method of forming an electronic device using a separation technique
US8076215B2 · kind B2 · utility
2Cited by
14References
16Claims
0Family size
Assignee
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Key dates
| Filing date | May 15, 2009 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Nov 5, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of forming an electronic device can include forming a patterned layer adjacent to a side of a substrate including a semiconductor material. The method can also include separating a semiconductor layer and the patterned layer from the substrate, wherein the semiconductor layer is a portion of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.