Insulated gate semiconductor device and method for producing the same
US8076718B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 28, 2005 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Mar 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
The invention has an object to provide an insulation gate type semiconductor device and a method for producing the same in which high breakdown voltage and compactness are achieved. The semiconductor device has a gate trench and a P floating region formed in the cell area and has a terminal trench and a P floating region formed in the terminal area. In addition, a terminal trench of three terminal trenches has a structure similar to that of the gate trench, and the other terminal trenches have a structure in which an insulation substance such as oxide silicon is filled. Also, the P floating region 51 is an area formed by implanting impurities from the bottom surface of the gate trench, and the P floating region is an area formed by implanting impurities from the bottom surface of the terminal trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.