Semiconductor device structures and related processes
US8076719B2 · kind B2 · utility
116Cited by
20References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2009 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Feb 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer through a region of vertical doped region. This local dopant zone decreases the minority carrier injection efficiency of the body diode of the device and alters the electric field distribution during the body diode reverse recovery.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.