Method for programming a multilevel phase change memory device
US8077506B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2010 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Dec 15, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a phase change device includes selecting a desired threshold voltage (Vth) and applying a programming pulse to a phase change material in the phase change device. The applying of the programming pulse includes applying a quantity of energy to the phase change material to drive at least a portion of this material above a melting energy level. A portion of the energy applied to the phase change material is allowed to dissipate below the melting energy level. The shape of the energy dissipation from the phase change material is controlled until the energy applied to the phase change material is less than a quenched energy level, to cause the phase change device to have the desired Vth. A remaining portion of the energy applied to the phase change material is allowed to dissipate to an environmental level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.