Methods, devices, and systems for dealing with threshold voltage change in memory devices
US8077515B2 · kind B2 · utility
13Cited by
31References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2009 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Nov 17, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3495
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure includes methods, devices, and systems for dealing with threshold voltage change in memory devices. A number of embodiments include an array of memory cells and control circuitry having sense circuitry coupled to the array. The control circuitry is configured to determine changes in threshold voltages (Vts) associated with the memory cells without using a reference cell, and adjust the sense circuitry based on the determined changes and without using a reference cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.