Resistor random access memory cell with L-shaped electrode
US8080440B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2010 |
| Grant date | Dec 20, 2011 |
| Priority date | — |
| Expiry date | Apr 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A phase change random access memory PCRAM device is described suitable for use in large-scale integrated circuits. An exemplary memory device has a pipe-shaped first electrode formed from a first electrode layer on a sidewall of a sidewall support structure. A sidewall spacer insulating member is formed from a first oxide layer and a second, “L-shaped,” electrode is formed on the insulating member. An electrical contact is connected to the horizontal portion of the second electrode. A bridge of memory material extends from a top surface of the first electrode to a top surface of the second electrode across a top surface of the sidewall spacer insulating member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.