Thick pseudomorphic nitride epitaxial layers
US8080833B2 · kind B2 · utility
43Cited by
92References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2010 |
| Grant date | Dec 20, 2011 |
| Priority date | — |
| Expiry date | Apr 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.