Method of thinning a semiconductor wafer using a film frame
US8084335B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2008 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Aug 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a thin semiconductor wafer. A semiconductor wafer is thinned from its backside followed by the formation of a cavity in a central region of the backside of the semiconductor wafer. Forming the cavity also forms a ring support structure in a peripheral region of the semiconductor wafer. An electrically conductive layer is formed in at least the cavity. The front side of the semiconductor wafer is mated with a tape that is attached to a film frame. The ring support structure of the semiconductor wafer is thinned to form the thinned semiconductor wafer. A backside tape is coupled to semiconductor wafer and to the film frame and the tape coupled to the front side of the semiconductor wafer is removed. The thinned semiconductor wafer is singulated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.