Patent · US Active

Remote plasma processing of interface surfaces

US8084339B2 · kind B2 · utility

24Cited by
8References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 12, 2009
Grant dateDec 27, 2011
Priority date
Expiry dateJul 1, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus includes a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.