Semiconductor device
US8084343B2 · kind B2 · utility
1Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2010 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Dec 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.