Method for manufacturing a dual damascene opening comprising a trench opening and a via opening
US8084357B2 · kind B2 · utility
5Cited by
9References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2007 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Apr 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a multi cap layer includes providing a substrate, forming a multi cap layer comprising a first cap layer and a second cap layer formed thereon on the substrate, forming a patterned metal hard mask layer on the multi cap layer, and performing an etching process to etch the multi cap layer through the patterned hard mask layer and to form an opening in the second cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.