Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor
US8084371B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 10, 2010 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Sep 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Field effect transistors, methods of fabricating a carbon insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor using the same are provided, the methods of fabricating the carbon insulating layer include maintaining a substrate disposed in a molecular beam epitaxy chamber at a temperature in a range of about 300° C. to about 500° C. and maintaining the chamber in vacuum of 10−11 Torr or less prior to performing an epitaxy process, and supplying a carbon source to the chamber to form a carbon insulating layer on the substrate. The carbon insulating layer is formed of diamond-like carbon and tetrahedral amorphous carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.