Substrate processing method and computer storage medium
US8084372B2 · kind B2 · utility
448Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2008 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Jan 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the present invention, a coating solution containing polysilazane is applied to a substrate to form a coating film. Thereafter, an ultraviolet ray is applied to the coating film formed on the substrate to cut a molecular bond of polysilazane in the coating film. Then, the coating film in which the molecular bond of polysilazane has been cut is oxidized while the coating film is being heated. Then, the oxidized coating film is baked at a baking temperature equal to or higher than a heating temperature when the coating film is oxidized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.