p+ polysilicon material on aluminum for non-volatile memory device and method
US8088688B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 5, 2010 |
| Grant date | Jan 3, 2012 |
| Priority date | — |
| Expiry date | Nov 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A method of forming a non-volatile memory device. The method includes providing a substrate having a surface region and forming a first dielectric material overlying the surface region. A first wiring material comprising at least an aluminum material is formed overlying the first dielectric material. The method forms a silicon material overlying the aluminum material and forms an intermix region consuming a portion of the silicon material and a portion of the aluminum material. The method includes an annealing process to cause formation of a first alloy material from the intermix region and a polycrystalline silicon material having a p+ impurity characteristic overlying the first alloy material. A first wiring structure is formed from at least a portion of the first wiring material. A resistive switching element comprising an amorphous silicon material is formed overlying the polycrystalline silicon material having the p+ impurity characteristic. A second wiring structure comprising at least a metal material is formed overlying the resistive switching element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.