IMS formed as can for semiconductor housing
US8089147B2 · kind B2 · utility
4Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2006 |
| Grant date | Jan 3, 2012 |
| Priority date | — |
| Expiry date | Mar 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulated metal substrate composite has a patterned conductive layer on one surface and receives one or more electrodes of MOSFETs or other die on the patterned segments which lead to the edge of the IMS. The outer periphery of the IMS is cupped or bent to form a shallow can with two or more die fixed to and thermally coupled to the flat web of the can while electrodes on the die surfaces thermally coupled to the web of the can lead to terminals on the rim of the can which are coplanar with the bottom surfaces of the die. The electrodes can be externally or internally connected to form a half bridge circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.