Electronic component formed with barrier-seed layer on base material
US8089154B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2009 |
| Grant date | Jan 3, 2012 |
| Priority date | — |
| Expiry date | May 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is an object of the present invention to provide a technology for forming an ULSI fine copper wiring by a simpler method. An electronic component in which a thin alloy film of tungsten and a noble metal used as a barrier-seed layer for an ULSI fine copper wiring is formed on a base material, wherein the thin alloy film has a composition comprising tungsten at a ratio equal to or greater than 50 at. % and the noble metal at a ratio of equal to or greater than 5 at. % and equal to or less than 50 at. %. The noble metal is preferably one or more kinds of metals selected from the group consisting of ruthenium, rhodium, and iridium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.