IC interconnect for high current
US8089160B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2007 |
| Grant date | Jan 3, 2012 |
| Priority date | — |
| Expiry date | Aug 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An IC interconnect according to one embodiment includes a first via positioned in a dielectric and coupled to a high current device at one end; a buffer metal segment positioned in a dielectric and coupled to a top portion of the first via; and a plurality of second vias positioned in a dielectric and coupled to the buffer metal segment at a bottom end and to a metal power line at a top end thereof, wherein the first via is coupled to a first end of the buffer metal segment and the plurality of second vias are coupled to a second end of the buffer metal segment, such that the first via is horizontally off-set from all of the plurality of second vias, wherein the butter metal segment is substantially shorter in length than the metal power line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.