Method of fabricating an epitaxially grown layer
US8093138B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2009 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Jan 12, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming an epitaxially grown layer by forming a region of weakness in a support substrate to define a support portion and a remainder portion on opposite sides of the region of weakness, epitaxially growing an epitaxially grown layer on the support portion after forming the region of weakness but prior to detachment of the support portion from the remainder portion; bonding the epitaxially grown layer to an acceptor substrate before detaching the remainder portion from the support portion; and detaching the remainder portion from the support portion at the region of weakness. The epitaxially grown layer may be removed from the support portion as a free-standing structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.