Amorphous Ge/Te deposition process

US8093140B2 · kind B2 · utility

Assignee

• ADVANCED TECHNOLOGY & MATERIALS CO., LTD. · US

Inventors

• Philip S. H. Chen · Bethel, US
• William Hunks · Waterbury, US
• Tianniu Chen · Westford, US
• Matthias Stender · Aurora, US
• Chongying Xu · New Milford, US
• Jeffrey F. Roeder · Brookfield, US
• Weimin Li · Lo Wu, CN

Key dates

• Filing date: Oct 31, 2008
• Grant date: Jan 10, 2012
• Expiry date: Sep 2, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/31678
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.