William Hunks
21Patents
8h-index
20Co-inventors
71Inventor score
Filing activity: Mar 12, 2007 → Jan 4, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9337054B2 | Precursors for silicon dioxide gap fill | Electricity | 426 | Active |
| US7838329B2 | Antimony and germanium complexes useful for CVD/ALD of metal thin films | Electricity | 41 | Active |
| US8008117B2 | Antimony and germanium complexes useful for CVD/ALD of metal thin films | Electricity | 14 | Active |
| US9537095B2 | Tellurium compounds useful for deposition of tellurium containing materials | Chemistry; Metallurgy | 12 | Active |
| US8796068B2 | Tellurium compounds useful for deposition of tellurium containing materials | Chemistry; Metallurgy | 12 | Active |
| US8093140B2 | Amorphous Ge/Te deposition process | Emerging Cross-Sectional Technologies | 10 | Active |
| US8268665B2 | Antimony and germanium complexes useful for CVD/ALD of metal thin films | Electricity | 9 | Active |
| US8709863B2 | Antimony and germanium complexes useful for CVD/ALD of metal thin films | Electricity | 9 | Active |
| US8288198B2 | Low temperature deposition of phase change memory materials | Chemistry; Metallurgy | 8 | Active |
| US8877549B2 | Low temperature deposition of phase change memory materials | Chemistry; Metallurgy | 5 | Active |
| US9034688B2 | Antimony compounds useful for deposition of antimony-containing materials | Electricity | 2 | Active |
| US8674127B2 | Antimony compounds useful for deposition of antimony-containing materials | Electricity | 1 | Active |
| US9637395B2 | Fluorine free tungsten ALD/CVD process | Electricity | 1 | Active |
| US11476158B2 | Cobalt deposition selectivity on copper and dielectrics | Electricity | 0 | Active |
| US8679894B2 | Low temperature deposition of phase change memory materials | Chemistry; Metallurgy | 0 | Active |
| US9373677B2 | Doping of ZrO2 for DRAM applications | Electricity | 0 | Active |
| US9219232B2 | Antimony and germanium complexes useful for CVD/ALD of metal thin films | Electricity | 0 | Active |
| US10870921B2 | Cyclopentadienyl titanium alkoxides with ozone activated ligands for ALD of TiO2 | Electricity | 0 | Active |
| US9269582B2 | Cluster ion implantation of arsenic and phosphorus | Electricity | 0 | Active |
| US8053375B1 | Super-dry reagent compositions for formation of ultra low k films | Electricity | 0 | Active |
| US10043658B2 | Precursors for silicon dioxide gap fill | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.