Patent · US Active

Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side

US8093143B2 · kind B2 · utility

4Cited by

1References

6Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Peter Storck · Mehring, DE
Thomas Buschhardt · Burghausen, DE

Key dates

Filing date	Mar 16, 2010
Grant date	Jan 10, 2012
Priority date	—
Expiry date	Jul 27, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/933
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a wafer with a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side, the method using steps in the following order:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.