Light emitting diode and wafer level package method, wafer level bonding method thereof, and circuit structure for wafer level package

US8097476B2 · kind B2 · utility

Assignees

• EPILEDS TECHNOLOGIES, INC. · TW
• Silicon Base Development Inc. · TW

Inventors

• Charng-Shyang Jong · Hsinchu, TW
• Ming-Sen Hsu · Tainan, TW
• Chin-Fu Ku · Baoshan, TW
• Chih-Ming Chen · Taipei, TW
• Deng-Huei Hwang · New Taipei, TW

Key dates

• Filing date: May 16, 2007
• Grant date: Jan 17, 2012
• Expiry date: Aug 7, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8581

Abstract

This invention discloses a light emitting diode, a wafer level package method, a wafer level bonding method, and a circuit structure for a wafer level package. The light emitting diode includes a package carrier, a conducting material, at least one light emitting diode structure and a package material. The package carrier has at least one package unit and two through holes on the package carrier and corresponding to the package unit. The conducting material is disposed in the through holes and formed at the bottom of the package unit. The light emitting diode structure is formed on a substrate. The substrate having a light emitting diode structure is flipped over in the package unit, and the electrodes of the light emitting diode structure are bonded with the conducting material. After the substrate is removed, a package material is stuffed in the package unit or on the light emitting diode structure.