SOI device having a substrate diode formed by reduced implantation energy

US8097519B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Maciej Wiatr · Dresden, DE
• Markus Forsberg · Dresden, DE
• Roman Boschke · Dresden, DE

Key dates

• Filing date: May 1, 2008
• Grant date: Jan 17, 2012
• Expiry date: Jan 17, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0212

Abstract

By removing material during the formation of trench openings of isolation structures in an SOI device, the subsequent implantation process for defining the well region for a substrate diode may be performed on the basis of moderately low implantation energies, thereby increasing process uniformity and significantly reducing cycle time of the implantation process. Thus, enhanced reliability and stability of the substrate diode may be accomplished while also providing a high degree of compatibility with conventional manufacturing techniques.