Reading phase change memories
US8098512B2 · kind B2 · utility
3Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2011 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | Mar 28, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A read current high enough to threshold a phase change memory element may be used to read the element without thresholding the memory element. The higher current may improve performance in some cases. The memory element does not threshold because the element is read and the current stopped prior to triggering the memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.