Method of providing an erase activation energy of a memory device
US8098521B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | Mar 31, 2005 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | Jul 12, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A write-once read-many times memory device is made up of first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the first and second electrode. The memory device is programmed by providing a charged species from the passive layer into the active layer. The memory device may be programmed to have for the programmed memory device a first erase activation energy. The present method provides for the programmed memory device a second erase activation energy greater than the first erase activation energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.