Method of inhibiting photoresist pattern collapse
US8101340B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | May 9, 2007 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Jan 27, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of inhibiting photoresist pattern collapse which includes the steps of providing a substrate; providing a photoresist layer on the substrate; exposing and developing the photoresist layer; applying a top anti-reflective coating layer to the photoresist layer; rinsing the photoresist layer; and drying the photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.