Methods for forming isolated fin structures on bulk semiconductor material

US8101486B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Witold P. Maszara · معلمی نژاد, US
• Hemant Adhikari · Albany, US

Key dates

• Filing date: Oct 7, 2009
• Grant date: Jan 24, 2012
• Expiry date: Jan 6, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024

Abstract

Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.