Patent · US Active

Method for producing a buried n-doped semiconductor zone in a semiconductor body and semiconductor component

US8101506B2 · kind B2 · utility

2Cited by

4References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Josef Lutz · Rohrau, AT
Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
Ralf Siemieniec · Villach, AT

Key dates

Filing date	Mar 8, 2010
Grant date	Jan 24, 2012
Priority date	—
Expiry date	Mar 8, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/157
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.