Plasma-activated deposition of conformal films
US8101531B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2010 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Sep 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and hardware for depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method for forming a thin conformal film comprises, in a first phase, generating precursor radicals off of a surface of the substrate and adsorbing the precursor radicals to the surface to form surface active species; in a first purge phase, purging residual precursor from the process station; in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the surface active species and generate the thin conformal film; and in a second purge phase, purging residual reactant from the process station.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.